Use of sub divided pattern for alignment mark recovery after int

Details Use of sub divided pattern for alignment mark recovery after int Use of sub divided pattern for alignment mark recovery after int

1997-07-28

1998-12-01

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

430 5, 430312, 430314, 430316, 430317, 430318, 148DIG102, 216 39, 438975, G03F 900

Patent

active

058436006

ABSTRACT:
A mask, which does not require additional reticles, and a method of using the mask for recovering alignment marks in a wafer after an inter-level dielectric layer has been planarized and a second layer of metal has been deposited on the planarized inter-level dielectric layer are described. An alignment mark protection pattern and a clearout window pattern are sub-divided so they can be formed from a first and a second mask element. These mask elements can be formed in the peripheral region of the reticle used to pattern the device region of the wafer. The mask elements are used to expose the alignment mark protection pattern in a first layer of photoresist and the clearout window pattern in a second layer of photoresist.

REFERENCES:
patent: 5456756 (1995-10-01), Ramaswami et al.
patent: 5503962 (1996-04-01), Caldwell

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