Use of silyating agents

Details Use of silyating agents Use of silyating agents

2008-09-16

2008-09-16

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

C438S725000, C438S780000, C438S787000, C257SE21560

Reexamination Certificate

active

10894319

ABSTRACT:
The present invention provides improvements to the use of silyating agents in semiconductor processing. More particularly, the silyating agents may be provided in combination with a substantially non-flammable ether, so that the combination is substantially non-flammable. Additionally, the silyating agent may be utilized in vapor form, or applied in conjunction with the electromagnetic radiation. Each of these embodiments can enhance the usability of the silyating agent, i.e., by rendering the silyating agent more safe, more easily utilized in a variety of processing equipment and/or by enhancing the passivation efficacy/efficiency of the silyating agent.

REFERENCES:
patent: 5378436 (1995-01-01), Endoh et al.
patent: 5429673 (1995-07-01), Peterson et al.
patent: 5694740 (1997-12-01), Martin et al.
patent: 5847443 (1998-12-01), Cho et al.
patent: 6140252 (2000-10-01), Cho et al.
patent: 6348407 (2002-02-01), Gupta et al.
patent: 6383466 (2002-05-01), Domansky et al.
patent: 6395651 (2002-05-01), Smith et al.
patent: 6417118 (2002-07-01), Hu et al.
patent: 6495906 (2002-12-01), Smith et al.
patent: 6531755 (2003-03-01), Usami
patent: 6537928 (2003-03-01), Matsuki et al.
patent: 6548113 (2003-04-01), Birnbaum et al.
patent: 6645702 (2003-11-01), Rangarajan et al.
patent: 7029826 (2006-04-01), Hacker et al.
patent: 2001/0034076 (2001-10-01), Martin
patent: 2002/0037371 (2002-03-01), Kumagai et al.
patent: 2002/0100419 (2002-08-01), Nagashima
patent: 2002/0123236 (2002-09-01), Tanaka et al.
patent: 2002/0123242 (2002-09-01), Smith et al.
patent: 2003/0008518 (2003-01-01), Chang et al.
patent: 2004/0050406 (2004-03-01), Sehgal
patent: 2004/0157430 (2004-08-01), Mandal
Patent Abstracts of Japan, Pub. No. 60047419, Pub. date Mar. 14, 1095.
Patent Abstracts of Japan, Pub. No. 03043741, Pub. date Feb. 25, 1991.
“Effective repair to ultra-low-k dielectric material (k˜2.0) by hexamethyldisilazane treatment,” Mor et al, J. Vac. Sci. Technol. B 20(4), Jul./Aug. 2002, American Vacuum Society.
“A Comparison of Hydrofluoroether and Other Alternative Solvent Cleaning Systems,” publication by Jason Kehren, 3M Company, St. Paul, MN.
P-T Liu, T.C. Chang, Y.S. Mor, C.W. Chen, T.M. Tsai, C.J. Chu, F.M. Pan and S.M. Sze, “Effective Strategy for Porous Organosilicate to Suppress Oxygen Ashing Damage”, Electrochemical and Solid-State Letters, 5(3), G11-G14 (2002).
T.C. Chang, Y.S. Mor, P.T. Liu, T.M. Tsai, C.W. Chen, C.J. Chu, F. M. Pan, W. Lur and S.M. Sze, “Trimethylchlorosilane Treatment of Ultralow Dielectric Constant Material after Photoresist Removal Processing”, J. Electrochem. Soc., 149(10), F145-F148 (2002).
T.C. Chang, Y.S. Mor, P.T. Liu, T.M. Tsai, C.W. Chen, Y.J. Mei and S.M. Sze, “Recovering Dielectric Loss of Low Dielectric Constant Organic Siloxane during the Photoresist Removal Process”, J. Electrochem. Soc., 149(8), F81-F84 (2002).
Y.S. Mor, T. C. Chang, P.T. Liu, T.M. Tsai, C.W. Chen, S. T. Yan, C. J. Chu, W.F. Wu, F.M. Pan, W. Lur and S.M. Sze, “Effective repair to ultra-low-k dielectric material (k˜2.0) by hexamethyldisilazane treatment”, J. Vac. Sci. Technol. B 20(4), 1334-1338 (2002).
T.C. Chang, P.T. Liu, Y.S. Mor, T.M. Tsai, C.W. Chen, Y.J. Mei, F.M. Pan, W.F. Wu and S.M. Sze, “Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment”, J. Vac. Sci Technol. B 20(4), 1561-1566 (2002).

Affiliated with

Also associated with

Rating

Use of silyating agents does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Use of silyating agents, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of silyating agents will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3952879