Use of silicon block process step to camouflage a false...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

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C438S184000, C438S303000, C257SE21438

Reexamination Certificate

active

07344932

ABSTRACT:
A technique for and structures for camouflaging an integrated circuit structure. A layer of conductive material having a controlled outline is disposed to provide artifact edges of the conductive material that resemble an operable device when in fact the device is not operable.

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