Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2008-03-18
2008-03-18
Cao, Phat X (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S184000, C438S303000, C257SE21438
Reexamination Certificate
active
07344932
ABSTRACT:
A technique for and structures for camouflaging an integrated circuit structure. A layer of conductive material having a controlled outline is disposed to provide artifact edges of the conductive material that resemble an operable device when in fact the device is not operable.
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Baukus James P.
Chow Lap-Wai
Clark Jr. William M.
Harbison Gavin J.
Cao Phat X
HRL Laboratories LLC
Ladas & Parry
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