Use of sidewall oxide to reduce filaments

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156657, 1566591, 156662, 437 43, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048062014

ABSTRACT:
The disclosure relates to a method for reducing filament formation over the BN+ oxide in semiconductor devices wherein a sidewall oxide is formed on the side walls of the first polysilicon layer prior to subsequent formation of the intermediate insulating layer, formation of a second polysilicon layer and subsequent anisotropic etch to provide for removal of all polysilicon over the field oxide.

REFERENCES:
patent: 4566175 (1986-01-01), Smayling et al.
patent: 4628588 (1986-12-01), McDavid
patent: 4713142 (1987-12-01), Mitchell et al.

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