Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-03-21
1989-02-21
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156657, 1566591, 156662, 437 43, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
048062014
ABSTRACT:
The disclosure relates to a method for reducing filament formation over the BN+ oxide in semiconductor devices wherein a sidewall oxide is formed on the side walls of the first polysilicon layer prior to subsequent formation of the intermediate insulating layer, formation of a second polysilicon layer and subsequent anisotropic etch to provide for removal of all polysilicon over the field oxide.
REFERENCES:
patent: 4566175 (1986-01-01), Smayling et al.
patent: 4628588 (1986-12-01), McDavid
patent: 4713142 (1987-12-01), Mitchell et al.
Garg Shaym G.
Mitchell Allan T.
Rao Kalipatnam V.
Tigelaar Howard L.
Anderson Rodney M.
Heiting Leo N.
Powell William A.
Sharp Melvin
Texas Instruments Incorporated
LandOfFree
Use of sidewall oxide to reduce filaments does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Use of sidewall oxide to reduce filaments, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of sidewall oxide to reduce filaments will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1520056