Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-06-12
1987-03-10
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29590, 29591, 427 88, 148191, H01L 21225
Patent
active
046481753
ABSTRACT:
A process for using selectively deposited tungsten in the making of ohmic contacts and contact/interconnect metallization patterns. In one form the process is employed to interconnect fully formed field effect devices using contacts through the dielectric layer. A thin layer of intrinsic polysilicon or amorphous silicon is conformally deposited, patterned and covered by selectively deposited tungsten, An anneal operation then forms self-aligned contacts or shunts, between the tungsten layer and the source/drain type diffusions exposed during the contact cut, by updiffusion through the thin intrinsic silicon, or by conversion of the thin intrinsic silicon to tungsten. Alternatively, contacts and shunts can be formed using polysilicon layers without regard to impurity type by making contact cuts through the dielectric to expose substrate regions, patterning a deposited polysilicon layer to cover only parts of such exposed regions, forming the field effect device source/drain regions, and then selectively depositing tungsten on all exposed surfaces of silicon. The tungsten thereby bridges the polysilicon layer to the adjacent, exposed substrate region and shunts all surface adjacent p-n junctions, including the polysilicon-to-substrate contact junction.
REFERENCES:
patent: 3632436 (1972-01-01), Denning
patent: 3699646 (1972-10-01), Vadasz
patent: 4101349 (1978-07-01), Roesner et al.
patent: 4128439 (1978-12-01), Jambotkar
patent: 4152823 (1979-05-01), Hall
patent: 4239559 (1980-12-01), Ito
patent: 4249968 (1981-02-01), Gardiner et al.
patent: 4265935 (1981-05-01), Hall
patent: 4276688 (1981-07-01), Hsu
patent: 4322736 (1982-03-01), Sasaki et al.
patent: 4330931 (1982-05-01), Liu
patent: 4333099 (1982-06-01), Tanguay et al.
patent: 4356622 (1982-11-01), Widmann
patent: 4374700 (1983-02-01), Scott et al.
patent: 4441247 (1984-04-01), Gargini et al.
patent: 4445266 (1984-05-01), Mai et al.
patent: 4450620 (1984-05-01), Fuls et al.
patent: 4503601 (1985-03-01), Chiao
patent: 4517225 (1985-05-01), Broadbent
patent: 4519126 (1985-05-01), Hsu
patent: 4540607 (1985-10-01), Tsao
patent: 4549914 (1985-10-01), Oh
patent: 4562640 (1986-01-01), Widmann et al.
patent: 4563805 (1986-01-01), Scovell et al.
patent: 4584207 (1986-04-01), Wilson
Moriya, T. et al, "A Planar Metallization process . . . ", IEDM 83, 25.3, pp. 550-553.
Warner et al, "Transistors-Fundamentals for the I-C. Engineer", John Wiley & Sons, 1983, p. 123.
Drury Michael J.
Metz, Jr. Werner A.
Miller Gayle W.
Sullivan Paul A.
Szluk Nicholas J.
Hawk Jr. Wilbert
Hearn Brian E.
NCR Corporation
Quach Tuan
Salys Casimer K.
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