Use of pulsed grounding source in a plasma reactor

Details Use of pulsed grounding source in a plasma reactor Use of pulsed grounding source in a plasma reactor

2006-06-13

2006-06-13

Zervigon, Rudy (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

C118S7230ER, C156S345430, C156S345440, C156S345450, C156S345460, C156S345470

Reexamination Certificate

active

07059267

ABSTRACT:
A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.

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