Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2008-07-22
2008-07-22
Duda, Kathleen (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
Reexamination Certificate
active
07402377
ABSTRACT:
This invention concerns liquid perfluoro-n-alkanes for use in applications demanding high transparency at UV wavelengths ranging from about 150 to 165 nm, especially 157 nm. Uses include optical couplants, optical cements, optical elements, optical inspection media for semiconductor wafers and devices, and most especially immersion photolithography at 157 nm exposure wavelength.
REFERENCES:
patent: 3462401 (1969-08-01), Kometani et al.
patent: 4760205 (1988-07-01), Probst et al.
patent: 5356668 (1994-10-01), Paton et al.
patent: 5760139 (1998-06-01), Koike et al.
patent: 5853894 (1998-12-01), Brown
patent: 6156389 (2000-12-01), Brown et al.
patent: 0 584 703 (1994-03-01), None
patent: 0 676 458 (1995-10-01), None
patent: 0 889 066 (1999-01-01), None
patent: 0 889 067 (1999-01-01), None
patent: 0 889 092 (1999-01-01), None
patent: 0 907 088 (1999-04-01), None
patent: WO 94/05498 (1994-03-01), None
patent: WO 96/34052 (1996-10-01), None
patent: WO 97/01599 (1997-01-01), None
patent: WO 97/11134 (1997-03-01), None
patent: WO 00/01758 (2000-01-01), None
patent: WO 01/85811 (2001-11-01), None
patent: WO 02/44226 (2002-06-01), None
Switkes, et al., “Immersion lithography: Beyond the 65 nm node with optics”, Microlithography World, (2003), pp. 4-6, 18 and 20, Massachusetts.
Switkes., “Resolution Enhancement of 157 nm Lithography by Liquid Immersion”, Proceedings of SPIE, (2002), pp. 459-465, vol. 4691, Massachusetts.
Switkes., et al., “Immersion Liquids for Lithography in the Deep Ultraviolet”, Proceedings of SPIE, (2003), pp. 690-699, vol. 5040, Massachusetts.
Albrecht., “VUV Absorbing Vapours in n-Perfluorocarbons”, European Organization for Nuclear Research, (2002) pp. 1-14.
Seki, et al., “Electronic Structure of Poly(tetrafluoroethylene) Studied by UPS, VUV Absorption, and Band Calculations”, Physica Scripta, (1990), pp. 167-171, vol. 41, Japan.
Belanger, et al., “The Far-Ultraviolet Spectra of Perfluoro-Normal-Paraffins”, Chemical Physics Letters. (1969), pp. 649-651, vol. 3, No. 8, Canada.
Lombos, et al., “The Electronic Spectra of Normal Paraffin Hydrocarbons”, Chemical Physics Letters (1967), pp. 42-43, vol. 1, Amsterdam.
PCT/US2004/024761, International Search Report dated Jan. 19, 2005.
French Roger Harquail
Wheland Robert Clayton
Duda Kathleen
E. I. Du Pont de Nemours and Company
LandOfFree
Use of perfluoro-n-alkanes in vacuum ultraviolet applications does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Use of perfluoro-n-alkanes in vacuum ultraviolet applications, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of perfluoro-n-alkanes in vacuum ultraviolet applications will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2806357