Use of field oxidation to simplify chamber fabrication in...

Details Use of field oxidation to simplify chamber fabrication in... Use of field oxidation to simplify chamber fabrication in...

2011-06-21

2011-06-21

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S052000, C438S053000, C257SE21249

Reexamination Certificate

active

07964474

ABSTRACT:
A method includes growing a first oxide region concurrently with a second oxide region in a substrate and forming an inlet path to the first oxide region, the inlet path exposing a first surface of the first oxide region. The method also includes removing the first oxide region to form a chamber, forming a first MOS transistor adjacent the second oxide region, and forming a second MOS transistor separated from the first MOS transistor by the second oxide region.

REFERENCES:
patent: 7071031 (2006-07-01), Pogge et al.
patent: 2004/0104973 (2004-06-01), Huang et al.
patent: 2008/0124873 (2008-05-01), Lee et al.

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