Static information storage and retrieval – Read/write circuit
Reexamination Certificate
2007-01-02
2007-01-02
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
C365S185010, C365S185210, C365S189050, C365S220000
Reexamination Certificate
active
11097517
ABSTRACT:
A non-volatile memory device includes circuitry for governing a multi-phase programming process in a non-volatile memory. The exemplary embodiment uses a quick pass write technique where a single programming pass is used, but the biasing of the selected memory cells is altered to slow programming as the memory cells approach their target values by raising the voltage level of the channels of the selected memory cells. A principle aspect of the present invention introduces a latch associated with the read/write circuitry connectable to each selected memory cell along a corresponding bit line for the storage of the result of the verify at this lower level.
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Cernea Raul-Adrian
Li Yan
Le Toan
Parsons Hsue & de Runtz LLP
Phung Anh
SanDisk Corporation
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