Use of chemical mechanical polishing in micromachining

Details Use of chemical mechanical polishing in micromachining Use of chemical mechanical polishing in micromachining

1996-10-11

1998-09-08

Gupta, Yogendra N.

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 11, 216 88, 216 89, 438 50, 438 52, 438 53, 438692, 438633, H01L 2100

Patent

active

058040846

ABSTRACT:
A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface.

REFERENCES:
patent: 5326726 (1994-07-01), Tsang et al.

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