Use of an organic dielectric as a sacrificial layer

Etching a substrate: processes – Etching of semiconductor material to produce an article...

Reexamination Certificate

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C216S011000, C216S027000, C216S075000, C430S313000

Reexamination Certificate

active

06905613

ABSTRACT:
A method for using an organic dielectric as a sacrificial layer for forming suspended or otherwise spaced structures. The use of an organic dielectric has a number of advantages, including allowing use of an organic solvent or etch to remove the sacrificial layer. Organic solvents only remove organic materials, and thus do not affect or otherwise damage non-organic layers such as metal layers. This may reduce or eliminate the need for the rinsing and drying steps often associated with the use of acidic etchants such as Hydrofluoric Acid.

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