Use of an asymmetric waveform to control ion bombardment during

Details Use of an asymmetric waveform to control ion bombardment during Use of an asymmetric waveform to control ion bombardment during

1997-12-01

2000-03-28

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600

Patent

active

06041734&

ABSTRACT:
A substrate processing system that includes a deposition chamber having a reaction zone, first and second electrodes, a mixed frequency RF power supply including a low frequency RF power source and a high frequency RF power source. The high frequency RF power supply provides enough power to form a plasma from a process gas introduced into the reaction zone and the low frequency RF power supply is configured to supply an asymmetrical waveform to either said first or second electrodes to bias the plasma toward the substrate.

REFERENCES:
patent: 4207137 (1980-06-01), Tretola
patent: 4500408 (1985-02-01), Boys et al.
patent: 4695700 (1987-09-01), Provence et al.
patent: 4854263 (1989-08-01), Chang et al.
patent: 4877999 (1989-10-01), Knapp et al.
patent: 4947085 (1990-08-01), Nakanishi et al.
patent: 5016663 (1991-05-01), Mase et al.
patent: 5121067 (1992-06-01), Marsland
patent: 5155547 (1992-10-01), Casper et al.
patent: 5256996 (1993-10-01), Marsland et al.
patent: 5267020 (1993-11-01), Marsland et al.
patent: 5352994 (1994-10-01), Black et al.
patent: 5364522 (1994-11-01), Wang
patent: 5366585 (1994-11-01), Robertson et al.
patent: 5367225 (1994-11-01), Pacholok et al.
patent: 5378939 (1995-01-01), Marsland et al.
patent: 5474648 (1995-12-01), Patrick et al.
patent: 5556549 (1996-09-01), Patrick et al.
patent: 5562952 (1996-10-01), Nakahigashi et al.
patent: 5576629 (1996-11-01), Turner et al.
patent: 5633073 (1997-05-01), Cheung et al.
patent: 5707486 (1998-01-01), Collins
patent: 5811022 (1998-09-01), Savas et al.
patent: 5825254 (1998-10-01), Lee
patent: 5888414 (1999-03-01), Collins et al.
D.G. Hemmes et al., "Control of Stress, Stability, and Mechanical Properties of PECVD Dielectric Films for GaAs and Si Applications, " ECS 9th Symposium on Plasma Processing #131, pp. 1-8.
A. Tsukune et al., "Properties of Silcon Nitride Films Prepared by Dual RF Plasma Deposition, " Fujitsu Limited, Abstract No. 385, p. 580.
E. van de Ven et al., Advantages of Dual Frequency PECVD of Deposition of ILD and Passivation Films, 7th International IEEE VLSI Multilevel Interconnection Conference, Jun. 12-13, 1990, Santa Clara, CA, (Jun. 1990).
M. Lieberman et al., Principles of Plasma Discharges and Materials Processing, John Wiley & Sons, Inc., pp. 328-339, (1994).

Affiliated with

Also associated with

Rating

Use of an asymmetric waveform to control ion bombardment during does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Use of an asymmetric waveform to control ion bombardment during , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of an asymmetric waveform to control ion bombardment during will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1316777