Use of a symmetric resistive memory material as a diode to...

Details Use of a symmetric resistive memory material as a diode to... Use of a symmetric resistive memory material as a diode to...

2011-04-19

2011-04-19

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S100000

Reexamination Certificate

active

07929335

ABSTRACT:
A symmetrically resistive memory material (such as a phase change material) is described for use as a rectifying element for driving symmetric or asymmetric resistive memory elements in a crosspoint memory architecture. The crosspoint architecture has a plurality of electrodes and a plurality of crossbar elements, with each crossbar element being disposed between a first and a second electrode. The crossbar element is made of a symmetric resistive memory element used as a rectifier in series with a symmetric or asymmetric resistive memory element.

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