Unit pixel in CMOS image sensor

Details Unit pixel in CMOS image sensor Unit pixel in CMOS image sensor

2007-10-16

2007-10-16

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S444000, C257S448000

Reexamination Certificate

active

10745896

ABSTRACT:
A unit pixel for use in a CMOS image sensor is employed to minimize a contact resistance between adjacent unit pixels by employing a supplementary p-well or modifying a unit pixel layout. The unit pixel having a photodiode, a transfer transistor, a reset transistor, a drive transistor and a selection transistor, the unit pixel including: a first active area having a protrusive portion thereof where the transfer transistor, the reset transistor and a VDD contact are formed, in which the VDD contact is formed apart from the photodiode in an adjacent unit pixel by a predetermined distance, to thereby minimize a leakage current, the first active area being connected to the photodiode; and a second active area where the drive transistor, the selection transistor and an output contact are formed, wherein the second active area is perpendicularly connected to the first active area.

REFERENCES:
patent: 6853044 (2005-02-01), Chung et al.
patent: 2002-329855 (2002-11-01), None

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