Unipolar voltage non-volatile JRAM cell

Details Unipolar voltage non-volatile JRAM cell Unipolar voltage non-volatile JRAM cell

1981-06-02

1984-03-06

Stellar, George G.

Static information storage and retrieval

Systems using particular element

Persistent internal polarization

357 22, 365218, G11C 1124, H01L 2980

Patent

active

044357850

ABSTRACT:
A non-volatile JRAM cell is constructed to require only positive voltage for programming and erasing of data in the cell. The "well" region of the cell JFET device may be implanted with an impurity concentration that will permit lower breakdown voltage or the non-volatile gate may overlap the JFET gate sufficiently to be able to have the same effect, or some combination of both may be used. This allows the cell to be erased using voltages of one polarity.

REFERENCES:
patent: 4156939 (1979-05-01), Takemae et al.
IBM Technical Disclosure Bulletin, vol. 23, No. 3, Aug. 1980, p. 1058, Dual Dielectric Capacitor, J. K. Howard.

Affiliated with

Also associated with

Rating

Unipolar voltage non-volatile JRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Unipolar voltage non-volatile JRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Unipolar voltage non-volatile JRAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-744529