Uniformity using stagnant silylation

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156643, 1566591, 156904, 118728, 427 431, 430323, H01L 21306, B44C 122, B05D 306, G03C 500

Patent

active

050857290

ABSTRACT:
A system and method whereby the uniformity of the silylating agent throughout the reaction chamber and primarily at the surface of the wafer is significantly improved to provide a significant improvement in the line width uniformity. In accordance with a first embodiment of the invention, this is accomplished by stagnant silylation wherein the silylating agent is introduced into the reaction chamber and the reaction chamber is then sealed during the entire time required to carry out the silylation. The advantage of this approach is optimum uniformity since once equilibrium has been reached, there is no net change of flow or pressure of the silylating agent across the wafer. Another advantage is reduction in the total consumption of the silylating and carrier gases. In accordance with a second embodiment of the invention, the silylating agent flows laminarly across the surface of the wafer to provide uniformity of the silylating agent at the wafer surface. This is accomplished by introducing the silylating agent and carrier gas along one side of the wafer and uniformly flowing the gases across the entire wafer due to a pressure differential across the wafer from the location(s) of gas entry into the reaction chamber to the location(s) of gas exit from the reaction chamber, for example.

REFERENCES:
patent: 4751170 (1988-06-01), Mimura et al.
patent: 4867838 (1989-09-01), Brooks et al.

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