Uniform plasma etching system

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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Details

156345, 156643, 204298, C23F 100, H01L 21306

Patent

active

042820774

ABSTRACT:
A uniform plasma etching system includes a plasma reaction chamber with a source of reactive gas communicating therewith and an RF generator connected to individual electrodes located in the plasma chamber, the electrodes arranged for defining separate part cells and separate plasma generating chambers between the separate cells and means for individually and separately adjusting each of the cells.

REFERENCES:
patent: 3615956 (1971-10-01), Irving
patent: 3879597 (1975-04-01), Bersin et al.
patent: 4012307 (1977-03-01), Phillips
patent: 4178877 (1979-12-01), Kudo
J. L. Vossen et al., Thin Film Processes, Academic Press, New York, 1978, pp. 531-533.

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