Uniform etching of silicon (doped and undoped) utilizing ions

Details Uniform etching of silicon (doped and undoped) utilizing ions Uniform etching of silicon (doped and undoped) utilizing ions

1982-04-20

1984-03-13

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 204192E, H01L 21308

Patent

active

044365810

ABSTRACT:
A plurality of silicon regions different in impurity concentration from each other are simultaneously subjected to dry etching in such a manner that neutral particles in a plasma do not substantially participate in etching and therefore etching is performed substantially by ions. Thus, the silicon regions different in impurity concentration from each other can be etched at substantially the same etching rate, independently of impurity concentration.

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patent: 4277304 (1981-07-01), Horiike
patent: 4298419 (1981-11-01), Suzuki et al.
Heath, "Selective . . . Si", J. of Electrochemical Society, vol. 129, No. 2, (2/82), pp. 396-402.
Coburn et al., "Ion-. . . etching", J. of Applied Physics, vol. 48, No. 8, (8/77), pp. 3532-3540.
Irene et al., "An Electron . . . Silicon", J. of Electrochemical Soc., vol. 128, No. 3, pp. 1971-1974.
Schwartz et al., "Reactive . . . Silicon", J. of Vacuum Science Tech., vol. 16, No. 2, (4/79), pp. 410-413.
Suzuki et al., "The Roles . . . Etching", J. of Electrochemical Soc., vol. 126, (6/79), pp. 1024-1028.

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