Unified non-volatile memory device and method for...

Details Unified non-volatile memory device and method for... Unified non-volatile memory device and method for...

2006-08-08

2006-08-08

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C257S320000, C257S321000, C257S322000, C257S326000

Reexamination Certificate

active

07087953

ABSTRACT:
A method for making a unified non-volatile memory (NVM) comprised of a NOR-type flash memory, a NAND-type flash memory, and a 3-transistor EEPROM integrated on the same chip is achieved. This unified NVM can be used in advanced smart card applications. The unification is achieved by forming the array of NVM cells and their peripheral high-voltage NMOS-FETs in a deep triple-P well or P-substrate while making high-voltage PMOS-FETs in a deep N well with breakdown voltages greater than +18 V and greater than −18 V, respectively. This novel NVM structure allows one to have compatible breakdown voltages for programming/erasing (charging and discharging) the floating-gate transistors in the NOR flash, the NAND flash, and 3-transistor EEPROM memory.

REFERENCES:
patent: 6545310 (2003-04-01), Li et al.
patent: 6801458 (2004-10-01), Sakui et al.
patent: 6888190 (2005-05-01), Yang et al.

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