Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-01-18
2011-01-18
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07872906
ABSTRACT:
A memory for which writing is conducted by using a unidirectional write current. Currents which differ in current pulse width are applied to a magnetoresistance element in a film thickness direction of the magnetoresistance element consisting of a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a third ferromagnetic layer having a variable magnetization direction, a first non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer located between the second ferromagnetic layer and the third ferromagnetic layer, to reverse a magnetization direction of either the second ferromagnetic layer or the third ferromagnetic layer by using a spin-transfer torque.
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patent: 2007/0019463 (2007-01-01), Saito et al.
Luc Thomas, et al., Oscillatory Dependence of Current-Driven Magnetic Domain Wall Motion on Current Pulse Length, (Sep. 2006) vol. 443/14, pp. 197-200, Nature Publishing Group.
Luc Thomas, et al., Resonant Amplification of Magnetic Domain-Wall Motion by a Train of Current Pulses, Science 315, (2007) pp. 1553-1556.
Hayakawa Jun
Ito Kenchi
Miura Katsuya
Takahashi Hiromasa
Antonelli, Terry Stout & Kraus, LLP.
Dinh Son
Hitachi , Ltd.
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