Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-14
1998-12-15
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257335, 257345, 257654, H01L 2978, H01L 2710
Patent
active
058500936
ABSTRACT:
The flash device is a field effect single cell device. The flash device has the source laying under the gate. The variance of gate voltage has the direct capacitor coupling and current injecting effects with the source to speed up the response of circuit. Furthermore, the process of the flash device is comparable with the CMOS device. It is an ideal device for the output buffer which has the anti-ground-bounce and anti-power-droop capabilities. The single cell technology is applied to the single cell active pixel to integrate four different components into one cell. The versatile operation is applied to have the super-flash EEPROM.
REFERENCES:
patent: 4163985 (1979-08-01), Schuermeyer et al.
patent: 4471368 (1984-09-01), Mohsen
patent: 4994999 (1991-02-01), Nishizawa
patent: 5198691 (1993-03-01), Tarn
patent: 5552623 (1996-09-01), Nishizawa et al.
Tarng Huang Chang
Tarng Min Ming
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