Undershoot resisting input circuit for semi-conductor device

Static information storage and retrieval – Read/write circuit – Including signal clamping

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365206, G11C 700

Patent

active

052873080

ABSTRACT:
An undershoot resisting input circuit for a semi-conductor device having a first terminal for a power supply, a second terminal for an external input, and an internal holding node in the semiconductor device, comprising a p-channel MOSFET having a gate connected to receive an address input signal and a source connected to the first terminal, a first n-channel MOSFET having a gate connected to receive the address input signal, a drain connected to the drain of the p-channel MOSFET and a source connected to the second terminal, a second n-channel MOSFET having a gate connected to the drain of the p-channel MOSFET and a drain connected to the second terminal, an inverter for inverting the address input signal, and a third n-channel MOSFET having a gate connected to an output terminal of the inverter, a drain connected to the source of the second n-channel MOSFET and a source connected to the internal holding node. The undershoot resisting input circuit according to the present invention prevents mis-operation which may result from the undershoot of the external input, thereby assuring high reliability of a device incorporating this circuit.

REFERENCES:
patent: 4678941 (1987-07-01), Chao et al.

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