Underlayer film for copper, and a semiconductor device...

Details Underlayer film for copper, and a semiconductor device... Underlayer film for copper, and a semiconductor device...

2006-04-04

2006-04-04

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S643000

Reexamination Certificate

active

07022606

ABSTRACT:
An underlayer film-forming material for copper, a method for forming the underlayer, an underlayer film for copper, and a semiconductor device including a substrate, the underlayer and copper wiring film, which prevents copper diffusion as well as provides superior adhesion to a copper wiring film, even if the film is thinner than conventional barrier metals. The underlayer film-forming material for copper is formed from a compound represented by a (R1R2)P—(R)n—Si(X1X2X3), wherein at least one of X1, X2, and X3represents a hydrolysable group; each of R1and R2represents an alkyl group; R represents a divalent linear organic group which is selected from an alkylene group, an aromatic ring, and an alkylene group including an aromatic ring; and n is an integer from 1 to 6.

REFERENCES:
patent: 5677545 (1997-10-01), Shi et al.
patent: 6323131 (2001-11-01), Obeng et al.
patent: 6905958 (2005-06-01), Gracias et al.
patent: 2004/0245518 (2004-12-01), Ramanath et al.
patent: 2005/0093162 (2005-05-01), Gracias
Ramanath et al., Self-assembled subnanolayers as interfacial adhesion enhancers and diffusion barriers for integrated circuits,Appl. Phys. Lett.,83 (Jul. 2003) 383.
Semaltianos et al., Copper chemical vapour deposition on organosilane-treated SiO2surfaces,Appl. Surf. Sci.,222 (2004) 102.
Doppelt et al., High affinity self-assembled monolayers for copper CVD,Microelectronic Engineering,76 (2004) 113.
Applied Physics Letters, vol. 78, No. 17, “Self-Assembled Near-Zero-Thickness Molecular Layers as Diffusion Barriers for Cu Metallization”, A. Krishnamoorthy, et al., Published by American Institute of Physics, Apr. 23, 2001, pp. 2467-2469.

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