Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-16
2005-08-16
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
06930032
ABSTRACT:
A method for creating an under bump metallization layer (37) is provided. In accordance with the method, a die (33) is provided which has a die pad (35) disposed thereon. A photo-definable polymer (51or71) is deposited on the die pad, and an aperture (66) is created in the photo-definable polymer. Finally, an under bump metallization layer (37) is deposited in the aperture. A die package is also provided comprising a die having a die pad (35) disposed thereon, and having an under bump metallization layer (37) disposed on the die pad. The structure has a depression or receptacle (57) therein and has a thickness of at least about 20 microns.
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Fay Owen
Keser Lizabeth Ann
Sarihan Vijay
Fortkort John A.
Fortkort Grether & Kelton LLP
Freescale Semiconductor Inc.
Zarneke David A.
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