Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-17
2007-04-17
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S614000, C438S615000
Reexamination Certificate
active
10288419
ABSTRACT:
The present invention relates to an improved method of forming and structure for under bump metallurgy (“UBM”) pads for a flip chip which reduces the number of metal layers and requires the use of only a single passivation layer to form, thus eliminating a masking step required in typical prior art processes. The method also includes repatterning bond pad locations.
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Akram Salman
Wood Alan G.
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