Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-03-15
2010-10-12
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S079000, C257S094000, C257S097000, C257S200000, C257S201000, C257SE21108, C257SE21112, C257SE21113
Reexamination Certificate
active
07812366
ABSTRACT:
An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
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Collins Charles J.
Garrett Gregory Alan
Sampath Anand Venktesh
Shen H. Paul
Wraback Michael
Bloor Stephen M.
Kyriakou Christos S.
Morgan Richard A.
Sefer A.
The United States of America as represented by the Secretary of
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