Static information storage and retrieval – Floating gate – Particular biasing
Patent
1991-01-30
1993-10-19
LaRoche, Eugene R.
Static information storage and retrieval
Floating gate
Particular biasing
257315, H01L 2978
Patent
active
052552195
ABSTRACT:
For obtaining improved writing characteristics, a reduced source resistance and an increased cell current of a ultraviolet-erasable type nonvolatile semiconductor memory device, a plurality of field oxide films with an asymmetrical pattern are provided which are arranged in rows and columns to define memory cells with a stacked gate structure having floating and control gates. Each of the field oxide films has an extended portion at both sides in a row direction. The floating and control gates include a portion extending on each of the field oxide films in a column direction. A cell slit is located at the extended portion of the field oxide film to electrically insulate the floating gates for every rows from one another. A common control gate layer is provided for every rows as the control gates of memory cells.
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Dinh Son
Kabushiki Kaisha Toshiba
LaRoche Eugene R.
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