Ultraviolet-erasable type nonvolatile semiconductor memory devic

Details Ultraviolet-erasable type nonvolatile semiconductor memory devic Ultraviolet-erasable type nonvolatile semiconductor memory devic

1991-01-30

1993-10-19

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

257315, H01L 2978

Patent

active

052552195

ABSTRACT:
For obtaining improved writing characteristics, a reduced source resistance and an increased cell current of a ultraviolet-erasable type nonvolatile semiconductor memory device, a plurality of field oxide films with an asymmetrical pattern are provided which are arranged in rows and columns to define memory cells with a stacked gate structure having floating and control gates. Each of the field oxide films has an extended portion at both sides in a row direction. The floating and control gates include a portion extending on each of the field oxide films in a column direction. A cell slit is located at the extended portion of the field oxide film to electrically insulate the floating gates for every rows from one another. A common control gate layer is provided for every rows as the control gates of memory cells.

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