Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-09-28
1994-02-22
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257347, 257350, 257365, 257366, H01L 2701, H01L 2910, H01L 2978, H01L 2712
Patent
active
052890279
ABSTRACT:
A submicron MOSFET is fabricated on an ultrathin layer with a generally intrinsic channel having a dopant concentration less than about 10.sup.16 cm.sup.-3. The channel thickness is preferably no greater than about 0.2 microns; the ratio of channel thickness to length is less than about 1:4, and preferably no greater than about 1:2. Punchthrough and other short-channel effects are inhibited by the application of an appropriate back-gate voltage, which may also be varied to adjust the voltage threshold.
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Terrill Kyle W.
Vasudev Prahalad K.
Denson-Low W. K.
Duraiswamy V. D.
Hughes Aircraft Company
Leitereg E. E.
Prenty Mark V.
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