Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-09-03
2000-11-07
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257408, 257384, 257900, H01L 2976, H01L 2994, H01L 31062, H01L 27088
Patent
active
06144071&
ABSTRACT:
A transistor is provided having a pair of sidewall spacers, each preferably including an ultrathin silicon nitride layer, adjacent to opposed sidewall surfaces of a gate conductor on a semiconductor substrate. Each spacer preferably includes a layer of thermally grown silicon nitride, and may also include a silicon dioxide layer. In an embodiment, the spacer includes a first silicon nitride layer adjacent to the sidewall surface, a silicon dioxide layer adjacent to the first silicon nitride layer, and a second silicon nitride layer adjacent to the silicon dioxide layer. Impurity distributions within the substrate may be aligned with any of the layers within the spacer, such that a distribution may be aligned with a sidewall surface or displaced outward from a sidewall surface. Such a distribution may be displaced outward by the lateral width of the spacer or by less than the lateral width of the spacer (i.e. the width of one or more layers within the spacer).
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Fulford Jr. H. Jim
Gardner Mark I.
May Charles E.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Loke Steven H.
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