Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S325000, C257S639000, C257S640000, C257S649000
Reexamination Certificate
active
06911707
ABSTRACT:
An ultrathin gate dielectric having a graded dielectric constant and a method for forming the same are provided. The gate dielectric is believed to allow enhanced performance of semiconductor devices including transistors and dual-gate memory cells. A thin nitrogen-containing oxide, preferably having a thickness of less than about 10 angstroms, is formed on a semiconductor substrate. A silicon nitride layer having a thickness of less than about 30 angstroms may be formed over the nitrogen-containing oxide. The oxide and nitride layers are annealed in ammonia and nitrous oxide ambients, and the nitride layer thickness is reduced using a flowing-gas etch process. The resulting two-layer gate dielectric is believed to provide increased capacitance as compared to a silicon dioxide dielectric while maintaining favorable interface properties with the underlying substrate. In an alternative embodiment, a different high dielectric constant material is substituted for the silicon nitride. Alternatively, both nitride and a different high dielectric constant material may be used so that a three-layer dielectric is formed.
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Fulford Jr. H. Jim
Gardner Mark I.
Kwong Dim-Lee
Advanced Micro Devices , Inc.
Kowert Robert C.
Meyertons Hood Kivlin Kowert & Goetzel P.C.
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