Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2005-08-30
2005-08-30
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C438S050000, C438S052000, C438S053000, C438S048000, C438S464000, C438S977000
Reexamination Certificate
active
06936524
ABSTRACT:
A process comprises reducing the thickness of a substrate carrying a plurality of devices, with at least certain of the devices having a micro-machined mesh. A carrier wafer is attached to the back side of the substrate and the fabrication of the devices is completed from the top side of the substrate. Thereafter the plurality of devices is singulated. Various alternative embodiments are disclosed which demonstrate that the thinning of the wafer may occur at different times during the process of fabricating the MEMS devices such as before the mesh is formed or after the mesh is formed. Additionally, the use of carrier wafers to support the thinned wafer enables process steps to be carried out on the side opposite from the side having the carrier wafer. The various alternative embodiments demonstrate that the side carrying the carrier wafer can be varied throughout the process.
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Ciferno Raymond A.
Zhu Xu
Akustica, Inc.
Anya Igwe U.
Baumeister B. William
Thorp Reed & Armstrong LLP
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