Ultrasonic energy enhanced chemi-mechanical polishing of silicon

Details Ultrasonic energy enhanced chemi-mechanical polishing of silicon Ultrasonic energy enhanced chemi-mechanical polishing of silicon

1992-02-14

1993-09-21

Kisliuk, Bruce M.

Abrasive tool making process, material, or composition

With carbohydrate or reaction product thereof

51122, 51 55, 51 54, 51 59SS, B24B 722, B24B 2902

Patent

active

052457907

ABSTRACT:
A technique for chemi-mechanical polishing of semiconductor wafers using ultrasonic energy is disclosed. A transducer is mounted in the polishing system, either to a platen to which the polishing pad is mounted, or to a carrier to which the semiconductor wafer is mounted. In either case, relative vibratory motion is established between the wafer and the polishing pad. The transducer may also be mounted within the reservoir containing the platen, carrier and polishing slurry, to agitate the slurry itself. By vibrating the polishing pad relative to the wafer, polish rate and repeatability are enhanced, the polishing process is less sensitive to pad use history, and the pad is somewhat self-conditioning.

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