Spacer formation in a BICMOS device

Details Spacer formation in a BICMOS device Spacer formation in a BICMOS device

1990-04-02

1993-06-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 31, 437162, 437200, 437 44, 148DIG9, 257565, H01L 2170

Patent

active

052197840

ABSTRACT:
A contact structure and a method for fabrication is disclosed for a semiconductor device that includes a plurality of semiconductor regions along the surface of the device, each region having a top surface and at least a sidewall surface, where a first part of the semiconductor regions are of a first conductivity type and a second part of semiconductor regions are of a second conductivity type. Select dielectric spacers are formed along the sidewalls of the select semiconductor regions of first conductivity type while a refractory metal such as titanium, molybdenum or tungsten is used to form contact on the sidewalls of the semiconductor regions of second conductivity type. This structure is most advantageous in bipolar, CMOS and BiCMOS transistor structures as it allows the formation of the sidewall spacers on emitter/gate contacts while having local metal interconnects with the reactive metal on the sidewall of the select base/source/drain contacts.

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