Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-22
2009-06-30
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S227000, C257S432000
Reexamination Certificate
active
07554142
ABSTRACT:
The invention provides an imager having a p-n-p photodiode with an ultrashallow junction depth. A p+ junction layer of the photodiode is doped with indium to decrease transient enhanced diffusion effects, minimize fixed pattern noise and fill factor loss.
REFERENCES:
patent: 4149174 (1979-04-01), Shannon
patent: 6140630 (2000-10-01), Rhodes
patent: 6204524 (2001-03-01), Rhodes
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6333205 (2001-12-01), Rhodes
patent: 6376868 (2002-04-01), Rhodes
patent: 7148528 (2006-12-01), Rhodes
patent: 2001/0009292 (2001-07-01), Nishinohara et al.
patent: 2004/0173799 (2004-09-01), Patrick
patent: 2004/0251398 (2004-12-01), Mouli et al.
Milnes, Arthur George, 2.1 Silicon: Impurities of Groups I, II, and III, Deep Impurities in Semiconductors, 1973, pp. 13-23, John Wiley & Sons, Inc., USA.
Milnes, Arthur George, 4.4 Amphoteric Dopants, Deep Impurities in Semiconductors, 1973, pp. 83-84, John Wiley & Sons, Inc., USA.
Xiang, Qi et al., Performance and Reliability of 70nm NMOSFETs with Indium Doped Retrogade Channels, pp. 1-2, Technology Development Group, Advanced Micro Devices, Inc., Sunnyvale, CA, USA.
P. Bouillon et al., “Anomalous Short Channel Effects in Indium Implanted NMOSFETS,” 1997 IEEE.
Y. Lee et al., “Indium Doped nMSOFETs and Buried Channel pMOSFETs with n+ Polysilicon Gate,” Jpn. J. Appl. Phys. vol. 36 (1997),, pp. 1341-1345.
I. C. Kizilyalli et al., “n+ Polysilicon Gate PMOSFET's with Indium Doped Buried-Channels,” IEEE Electron Device Letters, vol. 17 (1996), pp. 46 49.
G. G. Shahidi, “Indium Channel Implants for Improved MOSFET Behavior at the 100-nm Channel Length Regime,” IEEE Transactions on Electronic Devices, vol. 36 (1989) p. 2605.
H. Tian et al., “A Comparative Study of Indium and Boron Implanted Silicon Bipolar Transitors,” IEEE Transactions on Electron Devices, vol. 48 (2001), pp. 2520-2524.
Barnes Seth
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Wilczewski M.
LandOfFree
Ultrashallow photodiode using indium does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ultrashallow photodiode using indium, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultrashallow photodiode using indium will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4095345