Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-06
2006-06-06
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S232000, C257S234000
Reexamination Certificate
active
07057220
ABSTRACT:
The invention provides an imager having a p-n-p photodiode with an ultrashallow junction depth. A p+ junction layer of the photodiode is doped with indium to decrease transient enhanced diffusion effects, minimize fixed pattern noise and fill factor loss.
REFERENCES:
patent: 2004/0140491 (2004-07-01), Rhodes et al.
patent: 2004/0251398 (2004-12-01), Mouli et al.
patent: 2005/0023580 (2005-02-01), Rhodes
P. Boulon et al., “Anomalous Short Channel Effects in Indium Implanted nMOSFETS,” 1997 IEEE.
Y. Lee et al., “Indium Doped nMSOFETs and Buried Channel pMOSFETs wtih n+ Polysilicon Gate,” Jpn. J. Appl. Phys. vol. 36 (1997),, pp. 1341-1345.
I. C. Kizilyalli et al., “n+ Polysilicon Gale PMOSFET's with Indium Doped Buried-Channels,” IEEE Electron Device Letters, vol. 17 (1996), pp. 46 49.
G. G. Shahidi, “Indium Channel Implants for Improved MOSFET Behavior at the 100-nm Channel Length Regime,” IEEE Transactions on Electronic Devices, vol. 38 (1989) p. 2605.
H. Tian et al., “A Comparative Study of Indium and Boron Implanted Silicon Bipolar Transistors,” IEEE Transactions on Electron Devices, vol. 48 (2001), pp. 2520-2524.
Micro)n Technology, Inc.
Thai Luan
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