Ultrahigh-purity ferroelectric thin film

Details Ultrahigh-purity ferroelectric thin film Ultrahigh-purity ferroelectric thin film

1991-11-14

1993-09-14

Robinson, Ellis P.

Stock material or miscellaneous articles

Composite

Of metal

428472, 4284721, 428697, 428701, 428702, 252 629, 252519, B32B 1800

Patent

active

052447421

ABSTRACT:
Disclosed herein is an ultrahigh-purity ferroelectric thin film of Pb-containing ferroelectric represented by the formula Pb.sub.1-x La.sub.x (Zr.sub.y Ti.sub.1-y).sub.1-x/4 O.sub.3 (where Y is 0 or 1 or a decimal smaller than 1), characterized in that the total content of alkali metal impurities therein is less than 1 ppm, or characterized in that the total content of alkali metal impurities therein is less than 0.1 ppm and the total content of U and Th therein is less than 10 ppb. It will find use as infrared sensor, piezoelectric filter, vibrator, laser modulator, optical shutter, capacitor film, nonvolatile memory, etc. owing to its very low level of leakage current.

REFERENCES:
patent: 3303133 (1967-02-01), Bratschun
patent: 3816750 (1974-06-01), Liu
patent: 3917780 (1975-11-01), Mazdiyasni
patent: 3997690 (1976-12-01), Chen
patent: 4963390 (1990-10-01), Lipeles et al.

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