Ultrafine pattern forming method and ultrafine etching method us

Details Ultrafine pattern forming method and ultrafine etching method us Ultrafine pattern forming method and ultrafine etching method us

1996-08-13

1997-12-30

Breneman, R. Bruce

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains organic compound

216 66, 216 75, 216 79, 430296, 430313, 430942, 430967, C23F 100

Patent

active

057026203

ABSTRACT:
A resist film consisting of 5,11,17,23,29,35-hexachloromethyl-37, and soluble to a solvent is formed on a substrate etchable by a dry etching, has a selective region thereof exposed to the high-energy beam, with a remaining region unexposed thereto, and developed to define a pattern on the substrate, as the remaining region is removed by the solvent, before the substrate with the pattern is subjected to the dry etching. A nanometric patterning and etching is permitted, with a reduced process time.

REFERENCES:
patent: 5143784 (1992-09-01), Mita
Toshiyuki Yoshimura et al., "Nano edge roughness in polymer resist patterns", Applied Physics Letters, vol.63, #6, Aug. 9, 1993, pp. 764-766.
C. David Gutsche et al., "Calixarenes 12 --The Synthesis of Functionalized Calixarenes", Tetrahedron, vol. 42, No. 6, 1986, pp. 1633-1641.
"Fifth International Symposium on Inclusion Phenomena and Molecular Recognition", Abstract of Plenary Lectures and Posters, Orange Beach, Alabama, Sep. 18-23, 1988, pp. 3 and 4.
Mario Almi et al., "Chloromethylation of Calixarenes and Synthesis of New Water Soluble Macrocyclic Hosts", Tetrahedron, vol. 45, No. 7, pp. 2177-2183, 1989.

Affiliated with

Also associated with

Rating

Ultrafine pattern forming method and ultrafine etching method us does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ultrafine pattern forming method and ultrafine etching method us, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultrafine pattern forming method and ultrafine etching method us will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-199402