Ultra-thin MO-C film transistor

Details Ultra-thin MO-C film transistor Ultra-thin MO-C film transistor

1997-05-01

1999-03-16

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257415, 257416, 257418, 257420, 257245, 257254, 257789, 257295, B02J 1740, B05D 306

Patent

active

058834192

ABSTRACT:
A transistor in accordance with the invention comprises an ultra-thin Mo--C film functioning as a channel for an electron flow with two ends of the thin metal film functioning as source and drain terminals of the transistor, respectively; a piezoelectric film formed on the Mo--C film, for producing a force in accordance with an applied electric field provided by a gate voltage; and an electrode film formed on the piezoelectric film functioning as a gate of the transistor to which the gate voltage is applied to produce the applied electric field; and wherein a resistance of the Mo--C film between the source and drain terminals changes in accordance with the force produced in response to the applied gate voltage. This transistor can be used as an element of the three dimensional integrated circuit with a laminated structure.

REFERENCES:
patent: 4193835 (1980-03-01), Inoue et al.
patent: 4604159 (1986-08-01), Kaboyashi et al.
patent: 4605566 (1986-08-01), Matsui et al.

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