Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-09-05
2006-09-05
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S084000, C257S666000
Reexamination Certificate
active
07102159
ABSTRACT:
An image sensor package having at least one chip supporting bar secured to a top surface of an image sensor chip. The thickness of the chip supporting bar is absorbed within a vertical dimension of wire loops that connect bonding pads to leads so that the chip supporting bar does not contribute to the thickness of the image sensor package. An exposed back surface of the image sensor chip enhances thermal dissipation.
REFERENCES:
patent: 6274927 (2001-08-01), Glenn
patent: 6384472 (2002-05-01), Huang
patent: 6526653 (2003-03-01), Glenn et al.
patent: 6643919 (2003-11-01), Huang
Lin Chih-Wen
Tsai Chen Jung
Abraham Fetsum
Macronix International Co. Ltd.
Stout, Uxa Buyan & Mullins, LLP
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