Ultra-thin high-quality germanium on silicon by...

Details Ultra-thin high-quality germanium on silicon by... Ultra-thin high-quality germanium on silicon by...

2011-06-28

2011-06-28

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

C257SE21090, C257SE21129

Reexamination Certificate

active

07968438

ABSTRACT:
Exemplary embodiments provide semiconductor devices with a high-quality semiconductor material on a lattice mismatched substrate and methods for their manufacturing using low temperature growth techniques followed by an insulator-capped annealing process. The semiconductor material can have high-quality with a sufficiently low threading dislocation (TD) density, and can be effectively used for integrated circuit applications such as an integration of optically-active materials (e.g., Group III-V materials) with silicon circuitry. In an exemplary embodiment, the high-quality semiconductor material can include one or more ultra-thin high-quality semiconductor epitaxial layers/films/materials having a desired thickness on the lattice mismatched substrate. Each ultra-thin high-quality semiconductor epitaxial layer can be formed by capping a low-temperature grown initial ultra-thin semiconductor material, annealing the capped initial ultra-thin semiconductor material, and removing the capping layer.

REFERENCES:
patent: 5256550 (1993-10-01), Laderman et al.
patent: 5610085 (1997-03-01), Yuan et al.
patent: 7042052 (2006-05-01), Bhattacharyya
patent: 2004/0241459 (2004-12-01), Bedell et al.

Affiliated with

Also associated with

Rating

Ultra-thin high-quality germanium on silicon by... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ultra-thin high-quality germanium on silicon by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra-thin high-quality germanium on silicon by... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2653243