Ultra thin dielectric for electronic devices and method of makin

Details Ultra thin dielectric for electronic devices and method of makin Ultra thin dielectric for electronic devices and method of makin

1995-09-18

1996-11-26

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257410, 257411, 257639, 257640, 257649, H01L 2960, H01L 2702, H01L 2710

Patent

active

055788483

ABSTRACT:
High quality, ultra thin SiO.sub.2 /Si.sub.3 N.sub.4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N.sub.2 O-reoxidation (LRTNO) of Si.sub.3 N.sub.4 films. Si.sub.3 N.sub.4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) using SiH.sub.4 and NH.sub.3, followed by in situ low pressure rapid-thermal reoxidation in N.sub.2 O (LRTNO) or in O.sub.2 (LRTO) ambient. Results show that ultra thin (T.sub.ox,eq =.about.29 .ANG.) ON stacked film capacitors with LRTNO have excellent electrical properties, and reliability.

REFERENCES:
patent: 4266985 (1981-05-01), Ito et al.
patent: 4996081 (1991-02-01), Ellul et al.
patent: 5091761 (1992-02-01), Hiraiwa et al.
patent: 5318920 (1994-06-01), Hayashide
IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, pp. 3232.

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