Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-01
2010-10-12
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21411, C438S151000
Reexamination Certificate
active
07812397
ABSTRACT:
A MOSFET structure includes a planar semiconductor substrate, a gate dielectric and a gate. A UT SOI channel extends to a first depth below the top surface of the substrate and is self-aligned to and is laterally coextensive with the gate. Source-drain regions, extend to a second depth greater than the first depth below the top surface, and are self-aligned to the UT channel region. A BOX1 region extends across the entire structure, and vertically from the second depth to a third depth below the top surface. An upper portion of a BOX2 region under the UT channel region is self-aligned to and is laterally coextensive with the gate, and extends vertically from the first depth to a third depth below the top surface, and where the third depth is greater than the second depth.
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Cheng Changguo
Chidambarrao Dureseti
Greene Brian Joseph
Mandelman Jack A.
Rim Kern
International Business Machines - Corporation
Jones Graham S.
Le Thao P.
Schnurmann H. Daniel
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