Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-03-27
2007-03-27
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21415
Reexamination Certificate
active
10833452
ABSTRACT:
Provided is a MOSFET with an ultra short channel length and a method of fabricating the same. The ultra short channel MOSFET has a silicon wire channel region with a three-dimensional structure, and a source/drain junction formed in a silicon conductive layer formed of both sides of the silicon wire channel region. Also, a gate electrode formed on the upper surface of the silicon wire channel region by interposing a gate insulating layer having a high dielectric constant therebetween, and source and drain electrodes connected to the source/drain junction are included. The silicon wire channel region is formed with a triangular or trapezoidal section by taking advantage of different etch rates that depend on the planar orientation of the silicon. The source/drain junction is formed by a solid-state diffusion method.
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Anh Chang Geun
Cho Won-ju
Im Ki-ju
Lee Seong Jae
Oh Jihun
Blakely & Sokoloff, Taylor & Zafman
Chaudhari Chandra
Electronics and Telecommunications Research Institute
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