Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-04
2011-11-29
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S162000, C438S483000
Reexamination Certificate
active
08067805
ABSTRACT:
A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.
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Chen et al., U.S. Appl. No. 12/132,698, Office Action Communication Dec. 14, 2009, 6 pages.
Chen Huajie
Dokumaci Omer H.
Gluschenkov Oleg G.
Rausch Werner A.
Gibb I.P. Law Firm LLC
Henry Caleb
International Business Machines - Corporation
Li, Esq. Wenjie
Pham Thanh V
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