Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-06-04
2010-10-19
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S151000, C438S480000
Reexamination Certificate
active
07816237
ABSTRACT:
A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.
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patent: 6020244 (2000-02-01), Thompson et al.
patent: 6204138 (2001-03-01), Krishnan et al.
patent: 2004/0135210 (2004-07-01), Noguchi et al.
Chen Huajie
Dokumaci Omer H.
Gluschenkov Oleg G.
Rausch Werner A.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Toledo Fernando L
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