Ultra shallow junction formation by epitaxial interface...

Details Ultra shallow junction formation by epitaxial interface... Ultra shallow junction formation by epitaxial interface...

2008-07-22

2008-07-22

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000

Reexamination Certificate

active

07402870

ABSTRACT:
A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.

REFERENCES:
patent: 4863878 (1989-09-01), Hite et al.
patent: 6020244 (2000-02-01), Thompson et al.
patent: 2004/0135210 (2004-07-01), Noguchi et al.

Affiliated with

Also associated with

Rating

Ultra shallow junction formation by epitaxial interface... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ultra shallow junction formation by epitaxial interface..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra shallow junction formation by epitaxial interface... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2811667