Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-11-07
2000-04-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257374, 257389, 257401, 257408, 438163, 438217, 438231, H01L 31119
Patent
active
060464712
ABSTRACT:
A shallow junction MOS transistor comprising a semiconductor substrate having an upper region that includes a first and a second lightly doped region laterally displaced on either side of the channel region. The first and second lightly doped regions extend to a junction depth below the upper surface of the semiconductor substrate. A first and a second lightly doped impurity distribution are located within the first and second source/drain regions of the semiconductor substrate. The shallow junction transistor further includes a gate dielectric formed on an upper surface of the channel region of the semiconductor substrate. A conductive gate that includes a first and a second sidewall is formed on the gate dielectric. A gate insulator is formed in contact with the first and second sidewalls of the conductive gate. First and second source/drain structures are formed above the upper surface of the semiconductor substrate. The first and second source/drain structures are laterally displaced over the first and second lightly doped regions of the semiconductor substrate.
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Gardner Mark I.
Hause Fred N.
Kadosh Daniel
Advanced Micro Devices , Inc.
Daffer Kevin L.
Kowert Robert C.
Mintel William
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