Ultra low voltage static RAM memory cell

Static information storage and retrieval – Systems using particular element – Flip-flop

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365156, G11C 1100

Patent

active

061082333

ABSTRACT:
An integrated circuit includes a memory cell that stores a data bit corresponding to one of a low and a high voltage. A memory element is coupled to a data node for storing the data bit and to an inverse data node for storing an inverse of the data bit. An access port of the memory cell comprises an access switch having a first terminal coupled to a data line, a second terminal coupled to the data node, and a control terminal coupled to an access control line which provides an access control signal for switching the access switch on or off to selectively couple the data line to the data node. The memory cell has a preset switch having a first terminal coupled to the inverse data node, a second terminal coupled to a logic-0 voltage source, and a preset control terminal coupled to a preset control line which provides a write preset control signal for switching the preset switch on or off to selectively couple the inverse data node to the logic-0 voltage source.

REFERENCES:
patent: 5325325 (1994-06-01), Azuma
patent: 5590087 (1996-12-01), Chung et al.
patent: 5764564 (1998-06-01), Frake et al.
patent: 5877979 (1999-03-01), Li et al.
patent: 5894432 (1999-04-01), Lotfi

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