Ultra low voltage, low leakage, high density, variation...

Details Ultra low voltage, low leakage, high density, variation... Ultra low voltage, low leakage, high density, variation...

2007-12-31

2010-02-02

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S154000, C365S190000

Reexamination Certificate

active

07656702

ABSTRACT:
Methods and apparatus to provide ultra low voltage, low leakage, high density, and/or variation tolerant memory bit cells are described. In one embodiment, each of the cross-coupled invertors of a memory cell may include a plurality of p-channel transistors. Other embodiments are also described.

REFERENCES:
patent: 4912675 (1990-03-01), Blake et al.
patent: 4956815 (1990-09-01), Houston
patent: 5046044 (1991-09-01), Houston et al.
patent: 6208554 (2001-03-01), Phan et al.
patent: 6262932 (2001-07-01), Nguyen
patent: 6285580 (2001-09-01), Phan et al.
patent: 7286390 (2007-10-01), Yokoyama
patent: 7492627 (2009-02-01), Russell et al.

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