Ultra-low temperature Al fill for sub-0.25 .mu.m generation of I

Details Ultra-low temperature Al fill for sub-0.25 .mu.m generation of I Ultra-low temperature Al fill for sub-0.25 .mu.m generation of I

1997-10-23

2000-08-29

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

420528, 420529, 420903, 148502, 148505, 148535, 148438, 148DIG58, H01L 2144

Patent

active

061108294

ABSTRACT:
An aluminum fill process for sub-0.25 .mu.m technology integrated circuits that has a reflow temperature less than 400.degree. C. that has low alloy resistivity and excellent electromigration characteristics. The aluminum allow is composed of Al-1% Ge-1% Cu.

REFERENCES:
patent: 5691571 (1997-11-01), Hirose et al.
Kuniko Kikuta, Yoshihiro Hayashi, Tutomu Nakajima, Keiichi Harashima, and Takamaro Kikkawa, "Aluminum-Germanium-Copper Multilevel Damascene Process Using Low-Temperature Reflow Sputtering and Chemical Mechanical Polishing," Transactions On Electron Devices, vol. 43, No. 5, May 1996.
K. Kikuta and T. Kikkawa, "Electromigration Charactistics for Al-Ge-Cu" J. Electrochem. Soc. vol. 143, No. 3, Mar. 1996.
K. Kikuta, T. Kikkawa and H. Aoki, "0.25 .mu.m Contact Hole Filling By Al-Ge Reflow Sputtering," Microelectronic Research Laboratories, NEC Corporation.
K. Kikuta and t. Kikkawa, "Al-Ge Reflow Sputtering for Submicron Contact Hole Filling," J. Electrochem. Soc. vol. 143, No. 1, Jan. 1996.
K. Kikuta, Y. Hayashi, T. Nakajima, K. Harashima and T. Kikkawa, Aluminum-Germanium-Copper Multilevel Damascene Process using Low Temperature Reflow Sputtering and Chemical Mechanical Polishing, IEDM 94-101, 1994 IEEE.

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